Finally, we demonstrate a non-volatile memory device with on/off ratio of ∼100 in a CIPS/Si ferroelectric diode.ĬIPS is one of the few layered compounds which exhibits room-temperature ferroelectricity 11. Second-harmonic generation (SHG) measurements show the transition from ferroelectric to paraelectric accompanies the structural change from inversion asymmetric to symmetric. Here, we report the experimental observation of switchable polarization in CuInP 2S 6 (CIPS) films down to 4 nm at room temperature.
Currently the reported critical thickness for ferroelectricity in layered materials is relatively large (above 50 nm thick) 10, far from the ultrathin limit. However, ferroelectricity has so far remained elusive to the 2D material library. Meanwhile, the groundbreaking work on graphene has triggered an intense search for other 2D materials with intriguing physical properties 7, 8, 9. Studying weakly bonded non-oxide ferroelectric compounds is thus both fundamentally and practically rewarding. In addition, prevalent dangling bonds and defects at the interface drastically deteriorate the electronic coupling between ferroelectric and graphene like two-dimensional (2D) materials 5, due to the complex interface reconstruction and defect chemistry 6. This severely limits the possible materials that can be utilized in ferroelectric heterostructure devices. Due to the three-dimensional nature of the ferroelectric oxide lattices, epitaxial growth of high-quality films requires the careful selection of substrates with small lattice mismatch 4. Most technologically important ferroelectrics are perovskite oxides with strong covalent/ionic bonds, such as PbTiO 3 and BaTiO 3, which have been widely applied in electronic and optoelectronic devices 1, 2, 3. 050) combines rugged, high temperature and frequency performance in a slim design.Ferroelectricity is a collective property of certain materials in which macroscopic polarization arises from spontaneous ordering of electric dipoles and can be switched by external electric field. Let Agilent's 85070E Dielectric Probe Kit provide critical insight into your application. Even biomass, bulk density, bacterial content, and chemical concentration can be related to a material's electromagnetic properties. For example, it can provide important information about materials used in state-of-the-art RF and microwave electronic components. The 85070E has a frequency range of 200 MHz to 50 GHz and is useful in all stages of a product's lifecycle: design, incoming inspection, process monitoring, and quality assurance. Measuring them can provide critical insight to applications in many industries. Because these properties are determined by the molecular structure, they can be related to other properties of interest as well. The Agilent 85070E Dielectric Probe Kit, used with an Agilent network analyzer, determines the intrinsic electromagnetic properties of many dielectric materials.
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Software runs on a PC, or internally on the PNA Series of network analyzer and guides user through easy calibration and measurementĭata is easily shared with other Windows-based programs or through the user programmable Component Object Model (COM) interface Results can be viewed in a variety of formats: er´, er Measures complex permittivity over a broad frequency range Keysight Agilent 85070E 200MHz to 50GHz Dielectric Probe Kit
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